The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
| Autorius: | Henryk Temkin, Morton B. Panish, |
| Serija: | Springer Series in Materials Science |
| Leidėjas: | Springer Berlin Heidelberg |
| Išleidimo metai: | 2011 |
| Knygos puslapių skaičius: | 444 |
| ISBN-10: | 3642781292 |
| ISBN-13: | 9783642781292 |
| Formatas: | Knyga minkštu viršeliu |
| Kalba: | Anglų |
| Žanras: | Laser physics |
Parašykite atsiliepimą apie „Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures“
