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High Permittivity Gate Dielectric Materials

254,08 
254,08 
2025-07-31 254.0800 InStock
Nemokamas pristatymas į paštomatus per 13-17 darbo dienų užsakymams nuo 19,00 

Knygos aprašymas

"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .

Informacija

Serija: Springer Series in Advanced Microelectronics
Leidėjas: Springer Berlin Heidelberg
Išleidimo metai: 2016
Knygos puslapių skaičius: 524
ISBN-10: 3662501384
ISBN-13: 9783662501382
Formatas: Knyga minkštu viršeliu
Kalba: Anglų
Žanras: Condensed matter physics (liquid state and solid state physics)

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