Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and related alloy systems) make them an excellent choice for ef?cient light emitters in the visible as well as the UV region, UV detectors, and for a variety of electronic device such as high frequency unipolar power devices. There was a major upsurgein the research of the GaN material system around1970.
| Serija: | Springer Series in Materials Science |
| Leidėjas: | Springer Berlin Heidelberg |
| Išleidimo metai: | 2010 |
| Knygos puslapių skaičius: | 348 |
| ISBN-10: | 3642048285 |
| ISBN-13: | 9783642048289 |
| Formatas: | Knyga kietu viršeliu |
| Kalba: | Anglų |
| Žanras: | Condensed matter physics (liquid state and solid state physics) |
Parašykite atsiliepimą apie „Technology of Gallium Nitride Crystal Growth“
